李鸿渐 博士
邮箱: hongjianli@xmu.edu.cn
学历
本科 武汉大学物理学院
博士 中科院半导体所
美国西北大学和加州大学圣芭芭拉分校博士后和项目科学家
研究方向：
GaN基Micro-LEDs新型显示和激光器材料生长、芯片工艺和集成关键技术
学术兼职：
Advanced Materials、Light Science and Application, ACS Photonics, OE, APL 等出版社多个国际期刊审稿人
科研项目：
大尺寸高晶体质量半级性面GaN材料生长和激光器制备 面上基金
GaN基光电子器件 基金委优秀青年基金（海外）
论文:
1. P. Li, H. Li,* Y. Yao, N. Lim, M. Wong, M. Iza, M.Gordon J.S. Speck, S. Nakamura, S.P. DenBaars, “Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%,” ACS Photonics, 10, 1899, 2023. (通讯) (IF: 7.1)
2. P. Li, H. Li,* Y. Yang, M. Wong, M. Iza, J.S. Speck, S. Nakamura, S.P. DenBaars, “InGaN amber micrometer-scale light emitting diodes with a peak external quantum efficiency of 5.5%,” Applied Physics Express, 16, 064002, 2023. (通讯) (IF: 2.8)
3. P. Li, H. Li,* Y. Yao, K.S. Qwah, M. Iza, J.S. Speck, S. Nakamura, S.P. DenBaars, “Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes,” Optics Express, 31, 7572, 2023. (通讯) (IF: 3.8)
4. P. Li, H. Zhang, H. Li, T. Cohen, R. Anderson1, M. S. Wong1, E. Trageser, Y. Chow, M. D. Vries, S. Nakamura, S. P. DenBaars, “Demonstration of yellow (568nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells,” Applied Physics Letter, 121, 071103, 2022 (Semiconductor Today: https://www.semiconductortoday.com/news_items/2022/sep/ucsb-080922.shtml) (IF: 4.0)
5. P. Li, H. Li,* H. Zhang, Y. Yang, M. Wong, C. Lynsky, I. Mike, M. Golden, J. Speck, S. Nakamura, S. P. DenBaars, “Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact,” Applied Physics Letter, 120, 121102, 2022. (通讯) (IF: 4.0)
6. P. Li, H. Li*, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, I. Mike, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of ultra-small 5×5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%,” Applied Physics Letter, 120, 041102, 2022. (APL封面论文) (通讯) (IF: 4.0)
7. P. Li, H. Li*, M.S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J.S. Speck, S. Nakamura, S. P. DenBaars, “Progress of InGaN-Based Red Micro-Light Emitting Diodes” Crystals, 12, 541, 2022. (通讯) (IF: 2.1)
8. Y. Yao, H. Li, P. Li, C. Zollner, M. Wang, M. Iza, J.S. Speck, S.P. Denbaars, S. Nakamura, “Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes,” Applied Physics Express, 15, 064003, 2022. (IF: 2.8)
9. S. Denbaars, M. Wong, P. Li, H. Li, J. Smith, R. White, J. Ewing, P. Shapturenka, M. Gordon, C. Lynsky, J. Speck, S. Nakamura “III-nitride-based RGB microLEDs for AR/VR applications,” Light-Emitting Devices, Materials, and Applications XXVI, PC1202201, 2022
10. P. Li, A. David, H. Li*, H. Zhang, C. Lynsky, Y. Yang, I. Mike, J. Speck, S. Nakamura, S. P. DenBaars, “High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%,” Applied Physics Letter, 119, 231101, 2021. (通讯) (IF: 4.0)
11. P. Li, H. Li*, H. Zhang, C. Lynsky, I. Mike, J. Speck, S. Nakamura, S. P. DenBaars, “Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm,” Applied Physics Letter, 119, 081102, 2021. (通讯) (IF: 4.0)
12. P. Li, H. Li*, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control,” Applied Physics Letter, 118, 261104, 2021. (APL Feature Article and Scilight) (通讯) (IF: 4.0)
13. P. Li, H. Li*, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, J. Speck, S. Nakamura, S. P. DenBaars, “Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control,” Optics Express, 29, 22001, 2021. (通讯) (IF: 3.8)
14. P. Li, H. Li*, H. Zhang, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Optimization of efficient metalorganic chemical vapor deposition grown TJs for InGaN light-emitting diodes: epitaxy design and light extraction simulation,” Semiconductor Science and Technology, 36, 035019, 2021. (通讯) (IF: 2.0)
15. R.C White, M. Khoury, M.S. Wong, H. Li, C. Lynsky, M. Iza, S. Keller, D. Sotta, S. Nakamura, S. P. DenBaars, “Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers,” Crystals, 11, 1168, 2021. (IF: 2.1)
16. H. Li,* H. Zhang, J. Song, P. Li, S. Nakamura, S. P. DenBaars, “Toward heteroepitaxially grown semipolar GaN laser diodes under electrically-injected continuous-wave mode: from materials to lasers,” Applied Physics Review, 7, 041318, 2020. (一作) (IF: 19.5)
17. H. Zhang, P. Li, H. Li*, S. Nakamura, S. P. DenBaars, “Electrically driven, highly polarized monolithic white semipolar (20-21) InGaN micro-light-emitting diodes with surface plasmon coupled indium tin oxide gratings,” Applied Physics Letter, 117, 181105, 2020. (通讯) (IF: 4.0)
18. H. Zhang, H. Li*, P. Li, J. Song, J. S. Speck, S. Nakamura, S. P. DenBaars, “Room-temperature continuous-wave electrically driven semipolar (20-21) blue laser diodes heteroepitaxially grown on sapphire substrate,” ACS Photonics, 7, 1662, 2020. (通讯) (Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/aug/ucsb-060820.shtml) (IF: 7.1)
19. M. Khoury, H. Li*, Panpan Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy, 67, 104236, 2020. (通讯) (IF: 17.6)
20. P. Li, H. Zhang, H. Li*, Y. Zhang. Y. Yao, N. Palmquist, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage,” Semiconductor Science and Technology, 35 125023, 2020. (通讯) (Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/nov/ucsb-121120.shtml) (IF: 2.0)
21. P. Li, H. Zhang, H. Li*, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Sspeck, S. Nakamura, S. P. DenBaars “Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition,” Optics Express, 28, 18707, 2020. (通讯) (IF: 3.8) (Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jul/ucsb-160720.shtml)
22. H. Li, P. Li, H. Zhang, S. Nakamura, S. P. DenBaars, “Demonstration of efficient semipolar 410 nm violet laser diodes heteroepitaxially grown on high quality GaN/sapphire templates,” ACS Applied Electronics Materials, 2, 1874, 2020. (一作) (IF: 4.5)
23. H. Li*, P. Li, H. Zhang, Y. Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Sspeck, S. Nakamura, S. P. DenBaars, “Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate,” Optics Express, 28, 13569, 2020. (Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jun/ucsb-110620.shtml ) (一作) (IF: 3.8)
24. H. Li*, H. Zhang, P. Li, M. S Wong, Y. C. Chow, S. Pinna, J. Klamkin, P. Mierry, J. Speck, S. Nakamura, S. P DenBaars, “Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on high quality semipolar GaN/sapphire template,” Journal of Physics: Photonics, 2, 18150, 2020. (一作)
25. M. Khoury*, H. Li*, H. Zhang, B. Bonef, D. Cohen, F. Wu, M. Wong, P. DeMierry, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Demonstration of First Electrically Injected Semipolar Laser Diode on Low Defect Density Scalable Sapphire Substrates,” ACS Applied Materials & Interface, 11, 47106, 2019. (共一) (IF: 9.5)
26. H. Li,* M. S Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A Taylor, P. De Mierry, Z. Hassan, S. Nakamura, S. P DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template”, Optics Express, 27, 24154, 2019. (一作) (IF: 3.8)
27. P. Li, Y. Zhao, H. Li,* Z. Li, Y. Zhang, J. Kang, M. Liang, Z. Liu, X. Yi, and G .Wang, “Highly efficient InGaN green mini-size flipchip light-emitting diodes with AlGaN insertion layer,” Nanotechnology, 30, 095203, 2019. (通讯) (IF: 3.5)
28. P. Li, Y. Zhao, H. Li,* J. Che, Z. Zhang, Z. Li, Y. Zhang, L. Wang, M. Liang, X. Yi, and G. Wang, “Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD,” Optics Express, 26, 33108, 2018. (通讯) (IF: 3.8)
29. P. Li, Y. Zhao, X. Yi, H. Li*, “Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes,” Applied Sciences, 8, 2138, 2018. (通讯) (IF: 2.7)
30. I. Demir, H. Li, Y. Robin, R. McClintock, S. Elagoz, M. Razeghi. “Sandwich method to grow high quality AlN by MOCVD,” Journal of Physics D: Applied Physics, 51, 085104, 2018. (IF: 3.4)
31. P. Li, B. Bonef, M. Khoury, G. Lheureux, H. Li,* J. Kang, S. Nakamura and S. P. DenBaars, “Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes”, Superlattices and Microstructures, 113, 684, 2018. (通讯) (IF: 3.2)
32. H. Li,* M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. D. Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates,” ACS Applied Materials & Interfaces, 9, 36417, 2017. (一作) (IF: 9.5)
33. H. Li, P. Li,* J. Kang, J. Ding, J. Ma, Y. Zhang, X. Yi, G. Wang, “Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots”, Scientific Reports, 6, 35217, 2016. (一作) (IF: 4.6)
34. P. Li, H. Li,* Y. Zhao, J. Kang, Z. Li, Z Liu, X. Yi, J. Li, G Wang, “Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance”, IEEE Photonics Technology Letters, 27, 2004, 2015. (通讯) (IF: 2.4)
35. P. Li, H. Li,* Z. Li, J. Kang, X. Yi, J. Li, G. Wang, “Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes”, Journal of Applied Physics, 117, 073101, 2015. (通讯) (IF: 3.2)
36. P. Li, H. Li,* L. Wang, X. Yi, G. Wang, “High Quantum Efficiency and Low Droop of 400-nm InGaN Near-ultraviolet light-emitting diodes through suppressed leakage current”, IEEE Journal of Quantum Electronics, 51, 1, 2015. (通讯) (IF: 2.3)
37. H. Li,* P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes”, Applied Physics Express, 6, 102103, 2013. (Semiconductor Today: http://www.semiconductor-today.com/news_items/2013/NOV/CAS_041113.shtml ) (一作) (IF: 2.8)
38. H. Li,* P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization”, Applied Physics Express, 6, 092101, 2013. (一作) (IF: 2.8)
39. H. Li,* P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well”, Applied Physics Express, 6, 052102, 2013. (Semiconductor Today: http://www.semiconductor-today.com/news_items/2013/MAY/GREENLEDS_060513.html) (一作) (IF: 2.8)
40. H. Li,* J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer”, Applied Physics Letter, 102, 011105, 2013. (一作) (IF: 4.0)
